Advanced Materials Growth and Processing Facility

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Description

This most extensive of U.S. Army materials growth and processing facilities houses seven dedicated, state-of-the-art, molecular beam epitaxy and three metal organic chemical vapor deposition (MOCVD) systems that control, at the atomic level, growth of advanced semiconductors. Researchers design and engineer elements from across the periodic table for use in numerous optical devices, such as lasers and detectors, and in devices that span the electromagnetic spectrum and electronic components, such as field-effect transistors (FET) and thyristors.

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