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United States Patent | 5,956,604 |
Lee , et al. | September 21, 1999 |
A partially ionized beam (PIB) deposition technique is used to heteroepitally deposit a thin film of CoGe.sub.2 (001) on GaAs (100) substrates 14. The resulting epitaxial arrangement is CoGe.sub.2 (001) GaAs (100). The best epitaxial layer is obtained with an ion energy 1100 eV to 1200 eV and with a substrate temperature of approximately 280.degree. Centigrade. The substrate wafers are treated only by immersion in HF:H.sub.2 O 1:10 immediately prior to deposition of the epitaxial layer. Contacts grown at these optimal conditions display ohmic behavior, while contacts grown at higher or lower substrate temperatures exhibit rectifying behavior. Epitaxial formation of a high melting point, low resistivity cobalt germanide phase results in the formation of a stable contact to n-GaAs.
Inventors: | Lee; Sabrina L. (Schenectady, NY), Mello; Kevin E. (Ballston Spa, NY), Soss; Steven R. (San Jose, CA), Lu; Toh-Ming (Loudenville, NY), Murarka; Shyam P. (Clifton Park, NY) |
---|---|
Assignee: |
The United States of America as represented by the Secretary of the Army
(Washington,
DC)
|
Family ID: | 27361904 |
Appl. No.: | 08/889,608 |
Filed: | July 8, 1997 |
Current U.S. Class: | 438/606; 257/E21.172; 257/E29.144; 438/559; 438/605 |
Current CPC Class: | C30B 23/02 (20130101); H01L 21/28575 (20130101); C30B 29/52 (20130101); H01L 29/452 (20130101); C30B 23/02 (20130101); C30B 29/52 (20130101) |
Current International Class: | C30B 23/02 (20060101); H01L 21/285 (20060101); H01L 21/02 (20060101); H01L 29/40 (20060101); H01L 29/45 (20060101); H01L 021/28 () |
Field of Search: | ;438/605,606,559 |
3781612 | December 1973 | Llacer et al. |
4357183 | November 1982 | Fan et al. |
4550031 | October 1985 | Abrokwah |
4593307 | June 1986 | Rupprecht et al. |
4833042 | May 1989 | Waldrop et al. |
5173443 | December 1992 | Biricik et al. |
5770485 | June 1998 | Gardner et al. |
5789269 | August 1998 | Mehta et al. |
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