Nanoelectronics Characterization Laboratory

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Description

This facility houses growth and characterization capabilities for graphene and other 2D materials for application to electronic devices such as field-effect transistors (FET), bolometers, and supercapacitors. Growth equipment includes atmospheric pressure and low-vacuum chemical vapor deposition furnaces for single and multilayer graphene growth, and materials characterization capabilities including atomic force, Raman, and scanning electron microscopies. ARL's Raman mapping capability is state of the art and ideal for investigating nanomaterials and devices. High resolution mapping quantifies layer quality, doping effects, layer count, stacking order, and interface effects in novel 2D material configurations. Electrical characterization comprises equipment such as a vacuum/cryogenic probe station, a cryogenic hall probe system, a multichannel potentiostat for characterizing electrochemical devices, and various DC and pulsed semiconductors.

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