Available Technology

AlSb/InAs High Electron Mobility Transistors

NRL has developed materials growth and fabrication technology for the manufacture of high-speed, low power AlSb/InAs high electron mobility transistors (HEMTs) that exhibit state-of-the-art low-power performance. This technology includes the use of an InAlAs/AlSb barrier layer to reduce gate leakage current and a Pd/Pt/Au ohmic contact metallization, which enables ultra-low contact resistance.
Abstract: 
The Naval Research Laboratory (NRL) has developed materials growth and fabrication technology for the manufacture of high-speed, low power AlSb/InAs high electron mobility transistors (HEMTs) that exhibit state-of-the-art low-power performance. This technology includes the use of an InAlAs/AlSb barrier layer to reduce gate leakage current and a Pd/Pt/Au ohmic contact metallization, which enables ultra-low contact resistance. There has been extensive effort in the military and commercial sectors to reduce the power consumed by microwave and millimeter-wave low-noise solid-state amplifiers without compromising electrical performance. Low power consumption is essential to prolong battery life and to achieve high performance in a small package. Examples of platforms where size and/or weight matter include autonomous sensors, unmanned air vehicles, satellites, and man-portable systems. The NRL HEMTs exhibit excellent high speed performance at ultra-low drain voltages (100-200 mV) and an order of magnitude less power consumption than HEMTs based on competitive semiconductor material systems. An S-band, two-stage amplifier with 20 dB of gain dissipates a total power of only 365 μW, which is the lowest power dissipation of any microwave amplifier reported.
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