Available Technology

BSA 11-15: Reactive Ion Etching of Monolayer and Multilayer Materials

The invention describes two novel etching process that can be used to etch monolayer and multilayer structures made from a variety of materials such as tungsten and tungsten silicides. The etched materials can be potentially used in a wide range of fields such as semiconductor fabrication, MEMS (microelectromechanical systems), and refractive X-ray optics.
Patent Abstract: 
The invention describes two reactive ion etching processes for sectioning by etching of monolayer and multilayer materials. The first process is based on use of a combination of fluorine, oxygen and other halogen gases. The second process is based on use of a combination of fluorine, oxygen and other halogen gases. The silicide-based or organo-metallic monolayer that can be etched are WSi2, VSi2, MoSi2, Si, Mo, Ni, Al2O3, or W. The silicide-based or organo-metallic multilayer that can be etched include WSi2/Si, W/Si, W/B4C, W/C, Mo/Si, MoSi2/Si, Mo/B4C, Ni/B4C, Al2O3/B4C, VSi2/Si.
Benefits 
Unlike other currently used etching processes this invention describes single step processes that does not require any intervening passivation step. The processes provide for high anisotropy, adequate sidewall roughness control and high etching rates of both monolayer and multilayer structures made from a variety of materials. In addition, the processes can be carried out at room temperature.
applications 
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