Available Technology

SiO2/Si3N4 CMOS Compatible Light Emitting Photonic Structures

Standard multilayer approaches are able to produce good quality photonic structures, but do not activate efficient light emission from all the layer structure. There is therefore a strong need to address new material approaches able to produce intense light emission within a more flexible photonic design.
Abstract: 
This invention is about realizing efficient light emitting photonic structures by using an entirely new material together with its fabrication method, which is applicable to both periodic photonic crystals and more complex non periodic photonic structures. The approach relies entirely on thin film deposition of SiO2 and SiN4 thin films followed by thermal annealing treatments. Light emission can be activated by thermal annealing post growth treatments when thin film layers of SiO2 and SiNx or Si-rich oxide are used. Within a fully VLSI-CMOS compatible annealing window it is possible to activate light emitting structures characterized by little absorption in the visible range. From these aperiodic structures, that can be obtained in different vertical and planar device geometries, the presence of aperiodic order in a photonic device provides strong group velocity reduction (slow photons) and enhanced light-matter interaction.
Benefits: 
Fully CMOS compatible process - Little absorption in the visible range and high efficiency - Strong broad band luminescence signal - Enhanced light emission and enhanced gain
applications: 
Inventors: 
Lionel Kimerling
Lab Representatives
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