Ion Beam Laboratory


FLC Region

Security Lab



Sandia National Laboratories
P.O. Box 5800, MS-1056

Want more information? Contact a representative below.

Laboratory Representative


(505) 845-8594


Sandia's Ion Beam Analysis (IBA) program is recognized as one of the best in the world. It has the ability to examine a wide spectrum of materials, from semiconductors to metals and ceramics. Some of the accomplishments of the program include:

  • Invented several new ion beam analysis techniques for the quantitative analysis of light elements (H through F), and heavy elements (C through Pu).
  • Enhanced nuclear microprobe-based Single Event Upset (SEU) imaging system to supply submicron images of charge generation and collection in CMOS ICs. This new application of SEU-imaging is important for understanding and decreasing upset susceptibility.

This facility is available to support any based firm that has applications that can benefit from its unique capabilities. To make arrangements to use the Ion Beam Laboratory, contact the user liaison or visit the IBA Table of Elements siteto quickly retrieve information on the sensitivity, depth of analysis and depth resolution of most of the modern ion beam analysis techniques.


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  • 0.1 MeV NanoImplanter for highly controlled and localized (10nm) implants
  • 0.4 MeV Ion Implanter for implantation and fusion neutron production
  • 3 MV Pelletron accelerator for more routine IBA techniques such as RBS and channeling
  • 3-dimensional elemental distribution maps
  • 6 MV tandem Van de Graaff accelerator for analyses requiring high energies
  • Compositional and depth profiling of materials using Rutherford back scattering spectrometry (RBS)
  • Elastic recoil detection using a high energy, heavy ion beam
  • External ion beam analysis on a variety of materials that cannot be placed in a vacuum system
  • Ion channeling to probe the atomic structure of a material in the near surface, allowing the depth profiling of defects and stra
  • Quantitative elemental analysis using particle-induced x-ray emission with detection sensitivities of µg/g
  • RFQ booster for gold ions at 380 MeV for radiation effects R&D

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