Available Technology

Charged Particle-based Direct Writing of Boron and Silicon Carbide Structures from Nano to Millimeter Scale

This invention describes the deposition of boron and silicon carbide films using a novel fabrication method. Prior to this invention, deposition of boron containing materials via charged particle induced dissociation of boron precursor molecules had not been demonstrated. In industry, the main process is chemical vapor deposition (CVD), which relies on thermal dissociation of the precursor molecule to produce film growth. CVD has been used be produce a vast variety of boron containing materials and can be used to direct-write material using a laser beam. Techniques that rely on thermal heating for precursor dissociation such as CVD also involve heating of the substrate to processing temperature. Heating can induce thermally induced effects in the fabricated film and substrate, introducing material degradation and material distortion. This problem is also overcome in this described technology, which is critical in many fabrication environments.
Patent Abstract: 
The LLNL charged particle deposition technology enables fabrication of material via the charged particle induced dissociation of precursor molecules. For the case electron beam induced fabrication of boron carbide, gaseous boron precursor is delivered to a substrate in a vacuum chamber.
Internal Laboratory Ref #: 
37118
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